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IS49NLS18320

Part Number	IS49NLS18320
Manufacturer	Integrated Silicon Solution
Description	Separate I/O RLDRAM 2 Memory
Published	May 27, 2016
Detailed Description	IS49NLS96400,IS49NLS18320 576Mb (x9, x18) Separate I/O RLDRAM 2 Memory FEATURES ADVANCED INFORMATION JULY 2012 ...
Datasheet	IS49NLS18320 PDF File

Overview

IS49NLS96400,IS49NLS18320 576Mb (x9, x18) Separate I/O RLDRAM 2 Memory FEATURES ADVANCED INFORMATION JULY 2012  533MHz DDR operation (1.
067 Gb/s/pin data rate)  38.
4 Gb/s peak bandwidth (x18 Separate I/O at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (16K refresh for each bank; 128K refresh command must be issued in total each 32ms)  8 internal banks  Non‐multiplexed addresses (address multiplexing option available)  SRAM‐type interface  Programmable READ latency (RL), row cycle time, and burst sequence length  Balanced READ and WRITE latencies in order to optimize data bus utilization  Data mask signals (DM) to mask signal...

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