DatasheetsPDF.com

1SS412

Toshiba
Part Number 1SS412
Manufacturer Toshiba
Description Silicon Diode
Published May 28, 2016
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications 1SS412 Unit: imm z Low forwa...
Datasheet PDF File 1SS412 PDF File

1SS412
1SS412

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications 1SS412 Unit: imm z Low forward voltage z Low reverse current z Small total capacitance z Small package : VF = 1.
0 V (typ.
) : IR = 0.
1 nA (typ.
) : CT = 3.
0 pF (typ.
) : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation IFM IO IFSM P 300 * 100 * 1* 100 mA mA A mW Junction temperature Storage temperature range Tj 150 °C JEDEC Tstg −55 to 150 °C JEITA ― SC-70 Note: Using continuously under heavy loads (e.
g.
the application of high TOSHIBA 1-2P1C temperature/current/voltage and the significant change in Weight: 0.
006 g (typ.
) temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
*: Unit rating.
Total rating = unit rating × 0.
7 Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance (between cathode and anode) Symbol VF IR CT Test Circuit Test Condition ― IF = 100 mA ― VR = 80 V ― VR = 0, f = 1 MHz Min Typ.
Max Unit ― 1.
0 1.
3 V ― 0.
1 10 nA ― 3.
0 ― pF Equivalent Circuit (Top View) Marking P9 Start of commercial production 2002-08 1 2014-03-01 POWER DISSIPATION PC (mW) 1SS412 PC – Ta 200 150 100 50 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta (°C) 2 2014-03-01 1SS412 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)