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1SS417

Toshiba
Part Number 1SS417
Manufacturer Toshiba
Description Silicon Diode
Published May 28, 2016
Detailed Description TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417 1SS417 High Speed Switching Application • Small package •...
Datasheet PDF File 1SS417 PDF File

1SS417
1SS417

Overview
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417 1SS417 High Speed Switching Application • Small package • Low forward voltage: VF (3) = 0.
56V (typ.
) • Low reverse current: IR = 5μA (Max.
) 0.
1 0.
6±0.
05 Unit: mm A CATHODE MARK 1.
0±0.
05 0.
8±0.
05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 0.
2 ±0.
05 0.
07 M A 0.
1 0.
1±0.
05 Maximum (peak) reverse voltage Reverse voltage VRM VR 45 V 40 V 0.
48 +0.
02 -0.
03 Maximum (peak) forward current IFM 200 mA Average forward current IO 100 mA Surge current (10ms) IFSM 1A Power dissipation Junction temperature P * 100 mW fSC Tj 125 °C Storage temperature range Operating temperature range Tstg ...


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