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1SS426

Toshiba
Part Number 1SS426
Manufacturer Toshiba
Description Silicon Diode
Published May 28, 2016
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS426 Ultra-High Speed Switching Applications z Compact 2-pin package: Ide...
Datasheet PDF File 1SS426 PDF File

1SS426
1SS426

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS426 Ultra-High Speed Switching Applications z Compact 2-pin package: Ideal for high-density mounting z Low forward voltage : VF (3) = 0.
98 V (typ.
) z Fast reverse recovery time : trr = 1.
6 ns (typ.
) z Small total capacitance : CT = 0.
5 pF (typ.
) 1SS426 Unit: mm CATHODE MARK Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation Junction temperature Storage temperature VRM VR IFM IO IFSM P Tj Tstg 85 80 200 100 1 150 * 150 −55 to 150 V V mA mA A mW °C °C JEDEC ― JEITA ― ...


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