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1SS421

Silicon Diode

Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS421 1SS421 High-Speed Switching Application Low forward voltage: VF (3) = 0.50V (max) Abusolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VR IFM IO IFSM P...

Toshiba

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