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IXFN280N07

IXYS

Power MOSFET

Description
HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated High dV/dt, Low trr IXFN280N07 Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IAR EAR EAS dV/dt PD TJ TJM Tstg T L VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Terminal current limit TC = 25°C, pulse width l...


IXYS

IXFN280N07

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