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MS18N50

Bruckewell
Part Number MS18N50
Manufacturer Bruckewell
Description N-Channel MOSFET
Published Jun 1, 2016
Detailed Description MS18N50 500V N-channel MOSFET Description The MS18N50 is a N-channel enhancement-mode MOSFET, providing the designer wit...
Datasheet PDF File MS18N50 PDF File

MS18N50
MS18N50

Overview
MS18N50 500V N-channel MOSFET Description The MS18N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications Features • Originative New Design • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • 100% EAS Test • Extended Safe Operating Area • RoHS compliant package Application • High current, High speed switching • PFC (Power Factor Correction) • SMPS (Switched Mode Power Supplies) Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Symbol Parameter Value Unit VDS Drain-Source Voltage VGS Gate-Source Voltage Drain Current -Continuous (TC=25°C) ID Drain Current -Continuous (TC=100°C) 500 V ±30 V 18 A 10.
8 A IDM Drain Current -Pulsed 72 A EAS Single Pulsed Avalanche Energy 990 mJ EAR Repetitive Avalanche Energy 23.
5 mJ dV/dt Peak Diode Recovery dV/dt 4.
5 V/ns TJ, Tstg Operating Junction and Storage Temperature -55~+150 °C Power Dissipation (TC=25°C) PD Power Dissipation (TC=100°C) 238 W 1.
8 W • Drain current limited by maximum junction temperature Publication Order Number: [MS18N50] © Bruckewell Technology Corporation Rev.
A -2014 MS18N50 500V N-channel MOSFET Thermal Characteristics Symbol Parameter Rthjc Thermal Resistance resistance RθJA Thermal Resistance resistance Static Characteristics Symbol Test Conditions VGS VDS = VGS, ID = 250μA BVDSS △BVDSS /△TJ VGS = 0 V , ID = 250μA ID = 250μA, Referenced to 25°C IDSS IGSSF VDS = 500 V , VGS = 0 V VDS = 400 V , VGS = 0 V , TC = 125°C VGS =-30 V, VDS = 0 V IGSSR VGS = -30 V, VDS = 0 V *RDS(ON) VGS = 10 V , ID = 9 A Dynamic Characteristics Symbol Test Conditions CISS COSS VDS = 25 V, VGS = 0 V , f=1.
0MHz CRSS td(on) tr td(off) tf VDD = 250 V, ID = 18 A , RG = ...


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