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PJP5NA50

Pan Jit International
Part Number PJP5NA50
Manufacturer Pan Jit International
Description 500V N-Channel MOSFET
Published Jun 1, 2016
Detailed Description PPJU5NA50 / PJD5NA50 / PJP5NA50 / PJF5NA50 500V N-Channel MOSFET Voltage 500 V Current 5A Features  RDS(ON), VGS@1...
Datasheet PDF File PJP5NA50 PDF File

PJP5NA50
PJP5NA50

Overview
PPJU5NA50 / PJD5NA50 / PJP5NA50 / PJF5NA50 500V N-Channel MOSFET Voltage 500 V Current 5A Features  RDS(ON), VGS@10V,ID@2.
5A<1.
55Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free) Mechanical Data  Case: TO-251AA,TO-252AA ,TO-220AB, ITO-220AB-F Package  Terminals : Solderable per MIL-STD-750, Method 2026  TO-251AA Approx.
Weight : 0.
0104 ounces, 0.
297grams  TO-252AA Approx.
Weight : 0.
0104 ounces, 0.
297grams  TO-220AB Approx.
Weight : 0.
067 ounces, 1.
9 grams  ITO-220AB-F Approx.
Weight : 0.
068 ounces, 2 grams ITO-220AB-F TO-220AB TO-252AA TO-251AA Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 1) Power Dissipation TC=25oC Derate above 25oC Operating Junction and Storage Temperature Range VDS VGS ID IDM EAS PD TJ,TSTG Typical Thermal resistance - Junction to Case - Junction to Ambient RθJC RθJA TO-251AA 76 0.
61 1.
64 110 TO-220AB ITO-220AB-F 500 +30 5 20 234 87.
5 42 0.
7 0.
34 TO-252AA 76 0.
61 UNITS V V A A mJ W W/ oC -55~150 oC 1.
43 2.
98 1.
64 oC/W 62.
5 120 110  Limited only By Maximum Junction Temperature March 10,2014-REV.
00 Page 1 PPJU5NA50 / PJD5NA50 / PJP5NA50 / PJF5NA50 Electrical Characteristics (TA=25oC unless otherwise noted) PARAMETER SYMBOL TEST CONDITION Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Diode Forward Voltage Dynamic (Note 4) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS VGS(th) RDS(on) IDSS IGSS VSD VGS=0V,ID=250uA VDS=VGS,ID=250uA VGS=10V,ID=2.
5A VDS=500V,VGS=0...


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