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TMU8N60AZG

TRinno
Part Number TMU8N60AZG
Manufacturer TRinno
Description N-channel MOSFET
Published Jun 12, 2016
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet PDF File TMU8N60AZG PDF File

TMU8N60AZG
TMU8N60AZG

Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD8N60AZ(G)/TMU8N60AZ(G) BVDSS 600V N-channel MOSFET ID RDS(on) 7.
5A <1.
2W I-PAK Device TMD8N60AZ / TMU8N60AZ TMD8N60AZG / TMU8N60AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (...


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