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MT3S19TU

Toshiba Semiconductor
Part Number MT3S19TU
Manufacturer Toshiba Semiconductor
Description Silicon NPN Epitaxial Planar Type Transistor
Published Jun 14, 2016
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19TU MT3S19TU VHF-UHF Low-Noise, Low-Distortion Amplifier App...
Datasheet PDF File MT3S19TU PDF File

MT3S19TU
MT3S19TU

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19TU MT3S19TU VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Features • Low-Noise Figure : NF = 1.
5 dB (typ.
) (@ f = 1 GHz) • High Gain : |S21e|2=13 dB (typ.
) (@ f = 1 GHz) 2.
1±0.
1 1.
7±0.
1 Unit: mm 0.
3-+00.
.
015 1 23 2.
0±0.
1 0.
65±0.
05 0.
166±0.
05 0.
7±0.
05 Marking 3 T6 1.
BASE 2.
EMITTER 3.
COLLECTOR 12 Absolute Maximum Ratings (Ta = 25°C) UFM JEDEC - JEITA - TOSHIBA 2-2U1B Weight: 6.
6 mg (typ.
) Characteristics Symbol Rating Unit Collector-basevoltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC(Note 1) Tj Tstg 12 6 2 80 10 900 150 −55 to 150 V V V mA mA mW °C °C Note 1: The device is mounted on a ceramic board (25.
4 mm x 25.
4 mm x 0.
8 mm (t)) Note 2: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant ch...


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