N-channel MOSFET
Description
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification
TO-3PN
BVDSS 900V
TMAN9N90
N-channel MOSFET
ID RDS(on)
9.5A
< 1.4W
D
G
Device TMAN9N90
Package TO-3PN
Marking TMAN9N90
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulse...
Similar Datasheet