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TMP9N90

TRinno
Part Number TMP9N90
Manufacturer TRinno
Description N-channel MOSFET
Published Jun 15, 2016
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet PDF File TMP9N90 PDF File

TMP9N90
TMP9N90


Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP9N90/TMPF9N90 TMP9N90G/TMPF9N90G VDSS = 990 V @Tjmax ID = 9A RDS(ON) = 1.
4 W(max) @ VGS= 10 V D G Device TMP9N90 / TMPF9N90 TMP9N90G / TMPF9N90G Package TO-220 / TO-220F TO-220 / TO-220F S Marking TMP9N90 / TMPF9N90 TMP9N90G / TMPF9N90G Remark RoHS Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient November 2011 : Rev1 Symbol RqJC RqJA www.
trinnotech.
com TMP9N90(G) TMPF9N90(G) 900 ±30 9 9* 5.
7 5.
7 * 36 36* 221 9 29 290 48 2.
32 0.
38 4.
5 -55~150 300 TMP9N90(G) 0.
43 62.
5 TMPF9N90(G) 2.
6 62.
5 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Unit ℃/W ℃/W 1/5 TMP9N90/TMPF9N90 TMP9N90G/TMPF9N90G Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 900 -- -- V Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V -- IDSS VDS = 720 V, TC = 125°C -- -- 10 µA -- 100 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 nA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 nA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4...


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