N-channel MOSFET
Description
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification
TMA7N90/TMAN7N90
VDSS = 990 V @Tjmax ID = 7.2A RDS(on) = 1.9 W(max) @ VGS= 10 V
TO-3P/TO3PN
D
G
Device TMA7N90/TMAN7N90
Package TO-3P
Marking TMA7N90/TMAN7N90
S Remark RoHS
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
G...
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