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TMD4N65AZ

TRinno
Part Number TMD4N65AZ
Manufacturer TRinno
Description N-channel MOSFET
Published Jun 16, 2016
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet PDF File TMD4N65AZ PDF File

TMD4N65AZ
TMD4N65AZ

Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD4N65AZ(G)/TMU4N65AZ(G) BVDSS 650V N-channel MOSFET ID RDS(on) 4.
0A < 2.
4W I-PAK Device TMD4N65AZ / TMU4N65AZ TMD4N65AZG / TMU4N65AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMD4N65AZ / TMU4N65AZ TMD4N65AZG / TMU4N65AZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMD4N65AZ(G)/TMU4N65AZ(G) 650 ±30 4 2.
63 16 206 4 9.
84 98.
4 0.
78 4.
5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMD4N65AZ(G)/TMU4N65AZ(G) 1.
27 110 September 2012 : Rev0 www.
trinnotech.
com Unit ℃/W ℃/W 1/6 TMD4N65AZ(G)/TMU4N65AZ(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 650 -- -- V Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V -- IDSS VDS = 520 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 µA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 µA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) VDS = VG...


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