N-channel MOSFET
Description
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
D
Device TMT3N30G
Package SOT223
TMT3N30G
VDSS = 330V @Tjmax ID = 3A RDS(on) = 2.15 W(max) @ VGS= 10 V RDS(on) = 1.73 W(typ) @ VGS= 10 V
S D G
Marking TMT3N30G
D
G S
Absolute Maximum Ratings
Parameter
Drain-Sour...
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