Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor
3DD4515
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max) @IC=10A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier,high speed switching and
regulated power supply a...
Inchange Semiconductor
3DD4515 PDF File
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