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QPA2626

TriQuint Semiconductor
Part Number QPA2626
Manufacturer TriQuint Semiconductor
Description GaAs Low Noise Amplifier
Published Jun 20, 2016
Detailed Description Applications • Satellite Communications • Point-to-Point Communications QPA2626 17-22 GHz GaAs Low Noise Amplifier Pro...
Datasheet PDF File QPA2626 PDF File

QPA2626
QPA2626


Overview
Applications • Satellite Communications • Point-to-Point Communications QPA2626 17-22 GHz GaAs Low Noise Amplifier Product Features • Frequency Range: 17 – 22 GHz • Noise Figure: 1.
3 dB (typical) • Small Signal Gain: 25 dB (typical) • P1dB: 20 dBm (typical) • IM3: −55 dBc (typical) (Pout=0 dBm/tone) • Bias: VD = 3.
5 V, IDQ = 90 mA, VG = −0.
46 V (typical) • Plastic Overmolded Package • Package Dimensions: 4.
0 x 4.
0 x 0.
85 mm Functional Block Diagram 16 15 14 13 12 RF IN 1 2 3 17 11 10 RF OUT 9 4 5678 General Description Qorvo’s QPA2626 is a packaged, high-performance, low noise amplifier fabricated on Qorvo’s production 90nm pHEMT (QPHT09) process.
Covering 17 – 22 GHz, the QPA2626 provides 25 dB small signal gain and P1dB of 20 dBm, while supporting a noise figure of 1.
3 dB and IM3 levels of −55 dBc (at Pout=0 dBm/tone).
Packaged in a small 4 mm x 4 mm plastic overmold QFN, the QPA2626 is matched to 50 ohms with integrated DC blocking caps on both I/O ports for easy handling and simple system integration.
The QPA2626 high performance and ease of handling makes it ideal for satellite and point to point communication systems.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration Pad No.
1, 3, 9, 11, 17 (slug) 2 4 6 8 10 12 14 16 5, 7, 13, 15 Label GND RF Input VG1 VG2 VG3 RF Output VD3 VD2 VD1 N/C Ordering Information Part QPA2626 ECCN EAR99 Description 17 – 22 GHz Low Noise Amplifier Datasheet: Rev - 03-03-16 © 2016 TriQuint - 1 of 14 - Disclaimer: Subject to change without notice www.
triquint.
com, www.
qorvo.
com QPA2626 17-22 GHz GaAs Low Noise Amplifier Absolute Maximum Ratings Parameter Value Drain Voltage (VD) 5.
0 V Drain Current (ID1/ID2/ID3) 45/45/160 mA Gate Voltage Range 0 to −1.
5 V Gate Current (IG1/IG2/IG3 at 125 °C) 5.
0/5.
0/6.
6 mA RF Input Power (50 Ω, 85 °C) 20 dBm Channel Temperature, TCH 175 °C Mounting Temperature (30 seconds) 260 °C Storage Temperature −55 to 150 °C Operati...


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