P-Channel MOSFET
Description
SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Load Switch and Battery pack.
FEATURES VDSS=-30V, ID=-8A. Drain to Source On Resistance. RDS(ON)=20m (Max.) @ VGS=-10V RDS(ON)=35m ...
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