N-Channel MOSFET
Description
SEMICONDUCTOR
TECHNICAL DATA
General Description
It s mainly suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter.
FEATURES VDSS=20V, ID=0.4A Drain-Soure ON Resistance : RDS(ON)=0.70 @ VGS=4.5V : RDS(ON)=0.85 @ VGS=2.5V : RDS(ON)=1.25 @ VGS=1.8V Super High Dense Cell Design
KML0D4N20V
N-Ch Trench MOSFET
MAXIMUM RATING (Ta=25 )...
Similar Datasheet