DatasheetsPDF.com

KU3600N10W

KEC
Part Number KU3600N10W
Manufacturer KEC
Description N-Channel MOSFET
Published Jun 21, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching...
Datasheet PDF File KU3600N10W PDF File

KU3600N10W
KU3600N10W

Overview
SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for LED Lighting and DC/DC Converters.
FEATURES VDSS(Min.
)= 100V, ID= 1.
7A Drain-Source ON Resistance : RDS(ON)=0.
36 Qg(typ.
) =4.
2nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage VDSS 100 Gate-Source Voltage VGSS 20 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation TA=25 Derate above...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)