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2N5551

KEC
Part Number 2N5551
Manufacturer KEC
Description NPN TRANSISTOR
Published Jun 21, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Vo...
Datasheet PDF File 2N5551 PDF File

2N5551
2N5551

Overview
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current.
: ICBO=50nA(Max.
), VCB=120V Low Saturation Voltage : VCE(sat)=0.
2V(Max.
), IC=50mA, IB=5mA Low Noise : NF=8dB (Max.
) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB PC Tj Tstg RATING 180 160 6 600 100 625 150 -55 150 UNIT V V V mA mA mW L M C 2N5551 EPITAXIAL PLANAR NPN TRANSISTOR BC JA KE G D H FF 1 23 N DIM MILLIMETERS ...


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