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KTA1862D

KEC
Part Number KTA1862D
Manufacturer KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Published Jun 21, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA KTA1862D/L EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING...
Datasheet PDF File KTA1862D PDF File

KTA1862D
KTA1862D

Overview
SEMICONDUCTOR TECHNICAL DATA KTA1862D/L EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE SWITCHING.
POWER SUPPLY SWITCHING FOR TELEPHONES.
FEATURES High Breakdown Voltage, Typically : BVCEO=-400V.
Low Collector Saturation Voltage.
: VCE(sat)=-0.
5V(Max.
) at (IC=0.
5A) High Switching Speed, Typically : tf= 0.
4 S at IC=-1A Wide Safe Operating Area (SOA) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag Collector Current DC Pulse Collector Power Dissipation Ta=25 Tc=25 Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg RATING -400 -400 -7 -2.
0 -4.
0 1.
0 10 150 -55 150 UNIT V V V A W Q A C H FF 123 1.
BASE 2.
COLLECTOR 3.
EMITTER K E BD M I J P L O DIM A B C D E F H I J K L M O P Q MILLIMETERS 6.
60 +_ 0.
2 6.
10 +_ 0.
2 5.
0 +_ 0.
2 1.
10+_ 0.
2 2.
70+_ 0.
2 2.
30 +_ 0.
1 1.
00 MAX 2.
30 +_ 0.
2 0.
5 +_ 0.
1 2.
00 +_ 0.
20 0.
50 +_ 0.
10 0.
91+_ 0.
10 0.
90+_ 0.
1 1.
00 +_ 0.
10 0.
95 MAX DPAK Q AI CJ BD H G FF 123 1.
BASE 2.
COLLECTOR 3.
EMITTER K E DIM MILLIMETERS A 6.
60+_ 0.
2 B 6.
10+_ 0.
2 C 5.
0 +_ 0.
2 P D 1.
10+_ 0.
2 E 9.
50 +_ 0.
6 F 2.
30 +_ 0.
1 G 0.
76 +_ 0.
1 H 1.
0 MAX I 2.
30 +_ 0.
2 J 0.
5 +_ 0.
1 L K 2.
0 +_ 0.
2 L 0.
50 +_ 0.
1 P 1.
0 +_0.
1 Q 0.
90 MAX ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut of Current Emitter Cut of Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance SYMBOL ICBO IEBO BVCBO BVCEO BVEBO hFE(1) Note hFE(2) VCE(sat) VBE(sat) fT Cob Turn-on Time ton Switching Time Turn-off Time tstg Storage Time tf Note : hFE(1) Classification O:56~120, Y:82~180.
TEST CONDITION VCB=-400V VEB=-5V IC=-50 A IC=-1mA IE=-50 A VCE=-5V, IC=-100mA VCE=-5V, IC=-500mA IC=-500mA, IB=-100mA IC=-500mA, IB=-100mA VCE=-10V, IE=-100mA, f=5MHz VCB=-10V, IE=0mA, f=1MHz OU...


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