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KTA1045D

KEC
Part Number KTA1045D
Manufacturer KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Published Jun 21, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA KTA1045D/L EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHIN...
Datasheet PDF File KTA1045D PDF File

KTA1045D
KTA1045D

Overview
SEMICONDUCTOR TECHNICAL DATA KTA1045D/L EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS FEATURES High breakdown voltage VCEO 120V, high current 1A.
Low saturation voltage and good linearity of hFE.
Complementary to KTC2025D/L MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCBO VCEO VEBO IC ICP Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Storage Temperature Range Tj Tstg RATING -120 -120 -5 -1 -2 1.
0 8 150 -55 150 UNIT V V V A W Q A C H FF 123 1.
BASE 2.
COLLECTOR 3.
EMITTER K E BD M I J P L O DIM A B C D E F H I J K L M O P Q MILLIMETERS 6.
60 +_ 0.
2 6.
10 +_ 0.
2 5.
0 +_ 0.
2 1.
10+_ 0.
2 2.
70+_ 0.
2 2.
30 +_ 0.
1 1.
00 MAX 2.
30 +_ 0.
2 0.
5 +_ 0.
1 2.
00 +_ 0.
20 0.
50 +_ 0.
10 0.
91+_ 0.
10 0.
90+_ 0.
1 1.
00 +_ 0.
10 0.
95 MAX DPAK Q AI CJ BD H G FF 123 1.
BASE 2.
COLLECTOR 3.
EMITTER K E DIM MILLIMETERS A 6.
60+_ 0.
2 B 6.
10+_ 0.
2 C 5.
0 +_ 0.
2 P D 1.
10+_ 0.
2 E 9.
50 +_ 0.
6 F 2.
30 +_ 0.
1 G 0.
76 +_ 0.
1 H 1.
0 MAX I 2.
30 +_ 0.
2 J 0.
5 +_ 0.
1 L K 2.
0 +_ 0.
2 L 0.
50 +_ 0.
1 P 1.
0 +_0.
1 Q 0.
90 MAX ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut of Current Emitter Cut of Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Gain Bandwidth Product Output Capacitance Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) Note hFE(2) fT Cob VCE(sat) VBE(sat) Turn-on Time ton Switching Time Turn-off Time toff TEST CONDITION VCB=-50V, IE=0 VEB=-4V, IC=0 IC=-10 A, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 VCE=-5V, IC=-50mA VCE=-5V, IC=-500mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA I B2 IB1 1Ω 20µsec 100Ω 24Ω 1uF 1uF Storage Time tstg (Note) : hFE(1) Classification Y:100 200, GR:160 320 2V -12V VCE =-12V IC =10I B1 =-1...


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