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2SA1007

Part Number	2SA1007
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Jun 22, 2016
Detailed Description	isc Silicon PNP Power Transistor 2SA1007 DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : ...
Datasheet	2SA1007 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1007 DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.
) ·Complement to Type 2SC2337 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -10 A 100 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.
iscsemi.
com 1 is...

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