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2SA1028

Part Number	2SA1028
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Jun 22, 2016
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·Good Linearity of hFE ·Collector-Emitter Breakdo...
Datasheet	2SA1028 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·Good Linearity of hFE ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.
) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -10 A 95 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1028 isc website：www.
iscsemi.
com 1 isc & is...

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