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2SC3130

Part Number	2SC3130
Manufacturer	Inchange Semiconductor
Description	Silicon NPN RF Transistor
Published	Jun 23, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC3130 DESCRIPTION ·High Current-Ga...
Datasheet	2SC3130 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC3130 DESCRIPTION ·High Current-Gain Bandwidth Product ·Small Output Capacitance APPLICATIONS ·Designed for high-frequency amplification, oscillation, mixing applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 15 V 10 V 3V 50 mA 0.
15 W 150 ℃ -55~150 ℃ isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Spec...

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