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HFC2N60U

Part Number	HFC2N60U
Manufacturer	SemiHow
Description	600V N-Channel MOSFET
Published	Jun 27, 2016
Detailed Description	HFC2N60U HFC2N60U 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robu...
Datasheet	HFC2N60U PDF File

Overview

HFC2N60U HFC2N60U 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.
5 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 4 ȍ7\S#9GS=10V 100% Avalanche Tested November 2014 BVDSS = 600 V RDS(on) typ = ȍ ID = 2 A TO-126 1 23 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1...

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HFC2N60U 600V N-Channel MOSFET - SemiHow

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