N-Channel MOSFET Transistor
Description
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage, high speed power switching
applications such as switching regulators, converters, solenoid and r...
Inchange Semiconductor
2SK1118 PDF File
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