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2SK1211

Part Number	2SK1211
Manufacturer	Inchange Semiconductor
Description	N-Channel MOSFET Transistor
Published	Jul 1, 2016
Detailed Description	isc N-Channel MOSFET Transistor 2SK1211 DESCRIPTION ·Drain Current –ID=2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V...
Datasheet	2SK1211 PDF File

Overview

isc N-Channel MOSFET Transistor 2SK1211 DESCRIPTION ·Drain Current –ID=2.
5A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 2.
5 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
5...

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