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SSPR40N06

SeCoS
Part Number SSPR40N06
Manufacturer SeCoS
Description N-Channel Enhancement Mode Power MOSFET
Published Jul 3, 2016
Detailed Description Elektronische Bauelemente SSPR40N06 40A , 60V , RDS(ON) 12 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant P...
Datasheet PDF File SSPR40N06 PDF File

SSPR40N06
SSPR40N06


Overview
Elektronische Bauelemente SSPR40N06 40A , 60V , RDS(ON) 12 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSPR40N06 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SPR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
SPR-8PP FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 40N06 = Date code PACKAGE INFORMATION Package MPQ SPR-8PP 3K Leader Size 13 inch REF.
A B C D E F Millimeter Min.
Max.
3.
25 3.
40 3.
05 3.
25 3.
20 3.
40 3.
00 3.
20 0.
65 BSC.
2.
40 2.
60 REF.
G H I J K L Millimeter Min.
Max.
1.
35 1.
55 0.
24 0.
35 1.
13 REF.
0.
30 0.
50 0.
10 0.
20 0.
70 0.
90 SD SD SD GD ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1@VGS=10V TC=25°C TC=100°C Pulsed Drain Current 2 TC=25°C Single Pulse Avalanche Energy 3 VDS VGS ID I DM EAS 60 ±20 40 28 110 50 Avalanche Current Total Power Dissipation 4 TC=25°C Operating Junction & Storage Temperature IAS PD TJ, TSTG 30 69 -55~150 Thermal Resistance Rating Thermal Resistance Junction-Ambient1(Max).
Thermal Resistance Junction-Case1(Max).
RθJA RθJC 36 1.
8 Unit V V A A mJ A W °C °C / W °C / W http://www.
SeCoSGmbH.
com/ 30-May-2014 Rev.
A Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SSPR40N06 40A , 60V , RDS(ON) 12 mΩ N-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS 60 - - V VGS=0, ID= 250uA Gate-Threshold Voltage VGS(th) 2 - 4 V VDS=VGS, ID=250uA Gate-Source Leakage ...



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