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BAV70T

KEC
Part Number BAV70T
Manufacturer KEC
Description SILICON EPITAXIAL PLANAR DIODE
Published Jul 3, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small Package : ESM. Low Forward Volt...
Datasheet PDF File BAV70T PDF File

BAV70T
BAV70T

Overview
SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Small Package : ESM.
Low Forward Voltage : VF=0.
9V (Typ.
).
Fast Reverse Recovery Time : trr=1.
6ns(Typ.
).
Small Total Capacitance : CT=0.
9pF (Typ.
).
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage VRM 85 Reverse Voltage VR 80 Continuous Forward Current IF 150 Surge Current (10ms) IFSM 2 Power Dissipation PD 200 * Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On FR-5 Board (25.
4 19.
05 1.
57mm) UNIT V V mA A mW A G H BAV70T SILICON EPITAXIAL PLANAR DIODE C E B 2 13 DIM MILLIMETERS A 1.
60+_ 0.
10 D B 0.
85+_...


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