DatasheetsPDF.com

MMBD4148TW

JCET
Part Number MMBD4148TW
Manufacturer JCET
Description SWITCHING DIODE
Published Jul 4, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes BAS16TW/MMBD4148TW SWITCHING DIOD...
Datasheet PDF File MMBD4148TW PDF File

MMBD4148TW
MMBD4148TW


Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-363 Plastic-Encapsulate Diodes BAS16TW/MMBD4148TW SWITCHING DIODE SOT-363 FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance MARKING: 654 MMBD4148TW:KA2 BAS16TW:KA2 --- KA2 KA2 +++ --- Solid dot = Pin1 indicate.
123 KA2 KA2 Solid dot = Green molding compound device, +++ if none,the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @t=8.
3ms Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature VRM VRRM VRWM VR VR(RMS) IFM IO IFSM Pd RθJA Tj TSTG 100 75 53 300 150 2.
0 200 625 150 -55~+150 V V V mA mA A mW ℃/W ℃ ℃ Electrical Ratings @Ta=25℃ Parameter Reverse breakdown voltage Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol Min Typ Max Unit V (BR) 75 V VF1 0.
715 V VF2 0.
855 V VF3 1.
0 V VF4 1.
25 V IR1 1 μA IR2 25 nA CT 2 pF trr 4 ns Conditions IR=10μA IF=1mA IF=10mA IF=50mA IF=150mA VR=75V VR=20V VR=0V,f=1MHz IF=IR=10mA Irr=0.
1XIR,RL=100Ω www.
cj-elec.
com 1 C,Mar,2016 JUNCTION CAPACITANCE C (pF) J POWER DISSIPATION P (mW) D FORWARD CURRENT I (mA) F T a =100℃ Typical Characteristics Forward Characteristics 300 100 10 1 0.
0 0.
2 0.
4 0.
6 0.
8 1.
0 1.
2 1.
4 1.
6 FORWARD VOLTAGE V (V) F Capacitance Characteristics 1.
1 T =25℃ a f=1MHz 1.
0 0.
9 0.
8 0.
7 0.
6 0 4 8 12 16 20 REVERSE VOLTAGE V (V) R T a =25℃ REVERSE CURRENT I (nA) R 10000 1000 Reverse Characteristics T =100℃ a 100 T =25℃ a 10 1 0 20 40 60 80 100 REVERSE VOLTAGE V (V) R Power Derating Curve 250 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T (℃) a www.
cj-elec.
com 2 C,Mar,2...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)