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S27KS0641

Part Number	S27KS0641
Manufacturer	Cypress Semiconductor
Description	Self-Refresh DRAM
Published	Jul 4, 2016
Detailed Description	Not Recommended for New Designs (NRND) S27KL0641/S27KS0641 S70KL1281/S70KS1281 3.0 V/1.8 V, 64 Mb (8 MB)/128 Mb (16 MB)...
Datasheet	S27KS0641 PDF File

Overview

Not Recommended for New Designs (NRND) S27KL0641/S27KS0641 S70KL1281/S70KS1281 3.
0 V/1.
8 V, 64 Mb (8 MB)/128 Mb (16 MB), HyperRAM™ Self-Refresh DRAM 3.
0 V/1.
8 V, 64 Mb (8 MB)/128 Mb (16 MB), HyperRAM™ Self-Refresh DRAM Distinctive Characteristics HyperRAM™ Low Signal Count Interface ■ 3.
0 V I/O, 11 bus signals ❐ Single ended clock (CK) ■ 1.
8 V I/O, 12 bus signals ❐ Differential clock (CK, CK#) ■ Chip Select (CS#) ■ 8-bit data bus (DQ[7:0]) ■ Read-Write Data Strobe (RWDS) ❐ Bidirectional Data Strobe / Mask ❐ Output at the start of all transactions to indicate refresh latency ❐ Output during read transactions as Read Data Strobe ❐ Input during write transactions as Write Data Mask ■ RWDS DCA...

Similar Datasheet

S27KS0641 Self-Refresh DRAM - Cypress Semiconductor
S27KS0642 HyperRAM Self-Refresh DRAM - Cypress

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