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MMBD4448HTW

JCET
Part Number MMBD4448HTW
Manufacturer JCET
Description SWITCHING DIODE
Published Jul 5, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes MMBD4448HAQW/HADW/HCDW/HSDW/HTW S...
Datasheet PDF File MMBD4448HTW PDF File

MMBD4448HTW
MMBD4448HTW

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-363 Plastic-Encapsulate Diodes MMBD4448HAQW/HADW/HCDW/HSDW/HTW Switching Diode FEATURES z Fast Switching Speed z Ultra-Small Surface Mount Package z For General Purpose Switching Applications z High Conductance Power Dissipation SOT-363 MMBD4448HA4W MMBD4448HADW MMBD4448HCDW MMBD4448HSDW MMBD4448HTW MARKING:KA5 KA5 KA5 MARKING:KA6 +-- +-- KA6 KA6 --+ --+ MARKING:KA7 -++ -++ KA7 KA7 ++- ++- MARKING:KAB -+ -+ KAB KAB +- +- MARKING: KAA --- --- KAA KAA +++ +++ Solid dot = Pin1 indicate.
Solid dot = Green molding compound device, if none,the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃ Parameter Symbol Limit Non-Repetitive Peak Reverse Voltage VRM 100 Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 80 DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 57 Forward Continuous Current IFM 500 Average Rectified Output Current IO 250 Non-Repetitive Peak Forward Surge Current @t=8.
3ms IFSM 2.
0 Power Dissipation Thermal Resistance from Junction to Ambient Storage Temperature Pd RθJA TSTG 200 625 -55 ~+150 Unit V V V mA mA A mW ℃ /W ℃ www.
cj-elec.
com 1 D,Mar,2016 ELECTRICAL CHARACTERISTICS Electrical Ratings @Ta=25℃ Parameter Reverse Breakdown Voltage Forward Voltage Reverse Current Capacitance Between Terminals Symbol Min Typ Max Unit V (BR) 80 V VF1 0.
62 0.
72 V VF2 0.
855 V VF3 1.
0 V VF4 1.
25 V IR1 100 nA IR2 25 nA CT 3.
5 pF Reverse Recovery Time trr 4 ns Conditions IR=100μA IF=5mA IF=10mA IF=100mA IF=150mA VR=70V VR=20V VR=0V,f=1MHz IF=IR=10mA Irr=0.
1XIR,RL=100Ω www.
cj-elec.
com 2 D,Mar,2016 CAPACITANCE BETWEEN TERMINALS CT (pF) POWER DISSIPATION PD (mW) FORWARD CURRENT IF (mA) T a =100℃ Typical Characteristics Forward Characteristics 500 100 10 1 0.
0 0.
2 0.
4 0.
6 0.
8 1.
0 1.
2 1.
4 1.
6 FORWARD VOLTAGE VF (V) Capacitance Characteristics 1.
1 Ta=25℃ f=1MHz 1.
0 0.
9 0.
8 0.
7 0.
6 0 4 8 12 16 20 REV...


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