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MMBD4448HSDW

SeCoS
Part Number MMBD4448HSDW
Manufacturer SeCoS
Description Surface Mount Switching Diode Array
Published Jul 5, 2016
Detailed Description Elektronische Bauelemente MMBD4448HAQW ADW/CDW/SDW/TW Surface Mount Switching Diode Array FEATURES · Fast Switching Sp...
Datasheet PDF File MMBD4448HSDW PDF File

MMBD4448HSDW
MMBD4448HSDW


Overview
Elektronische Bauelemente MMBD4448HAQW ADW/CDW/SDW/TW Surface Mount Switching Diode Array FEATURES · Fast Switching Speed · Ultra-Small Surface Mount Package · High Conductance Power dissipation RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free .
055(1.
40) .
047(1.
20) SOT-363 .
026TYP (0.
65TYP) .
021REF (0.
525)REF 8o 0o .
096(2.
45) .
085(2.
15) .
053(1.
35) .
045(1.
15) MECHANICAL DATA · Case: SOT-363, Molded Plastic · Terminals: Solderable per MIL-STD-202, Method 208 · Polarity: See Diagrams Below · Weight: 0.
006 grams (approx.
) · Mounting Position: Any 4 5 6O 3 2 1 .
014(0.
35) .
006(0.
15) .
087(2.
20) .
079(2.
00) .
043(1.
10) .
035(0.
90) .
018(0.
46) .
010(0.
26) .
006(0.
15) .
003(0.
08) .
004(0.
10) .
000(0.
00) .
039(1.
00) .
035(0.
90) Dimensions in inches and (millimeters) 6 54 6 54 654 65 4 654 1 23 1 23 1 23 12 3 123 MMBD4448HAQW Marking: KA5 MMBD4448HADW Marking: KA6 MMBD4448HCDW Marking: KA7 MMBD4448HSDW Marking: KAB MMBD4448HTW Marking: KAA MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage RMS Reverse Voltage Average Rectified out Current(Note 1) Forward Continuous Current (Note 1) Thermal Resistance Junction to Ambient Air (Note1) Storage Temperature Range VRM VRRM VR(RMS) Io IFM R thJA Tstg 100 80 57 250 500 625 – 55 to +150 V V V mA mA °C/W °C Notes: 1.
Device mounted on FR-4 PCB, 1 inch x 0.
85 inch x 0.
062 inch; pad layout as shown on Diodes Inc.
suggested pad layout ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Reverse Breakdown Voltage (Note 2) Forward Voltage (Note 2) IF=5.
0mA V(BR)R IF=10mA IF=100mA VF IF=150mA Reverse Current (Note 2) VR=70V VR=75V, Tj=150OC VR=25V, Tj=150OC VR=20V IR Total Capacitance VR=6V, f=1.
0MHz CT Reverse Recovery Time IF=IR=10mA, Irr=0.
1XIR,RL=100 Ohms t rr Min 80 0.
62 — — — — — — — — — Max Ð 0.
72 0.
855 1.
0 1.
25 100 50 30 25 3.
5 4.
0 ...



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