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4N60H

Part Number	4N60H
Manufacturer	KIA
Description	N-CHANNEL MOSFET
Published	Jul 8, 2016
Detailed Description	KIA SEMICONDUCTORS 4.0A 600V N-CHANNEL MOSFET 4N60H 1.Description The KIA4N60H N-Channel enhancement mode silicon gat...
Datasheet	4N60H PDF File

Overview

KIA SEMICONDUCTORS 4.
0A 600V N-CHANNEL MOSFET 4N60H 1.
Description The KIA4N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
2.
Features  RDS(ON) =2.
3Ω@ VGS=10V  Low gate charge (typical 13.
5nC)  High ruggedness  Fast switching capability  Avalanche energy specified  Improved dv/dt capability 3.
Pin configuration Pin 1 2 3 4 1 of 6 Function Gate Drain Source Drain Rev 1.
1 JAN 2014 KIA SEMICONDUCTORS 4.
0A 600V N-CHANNEL MOSFET 4N60H 4.
Absolute maximum ratings Parameter Symbol Drain-source voltage Gate-sour...

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