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2SK1706

Inchange Semiconductor
Part Number 2SK1706
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Jul 9, 2016
Detailed Description isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Fast...
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2SK1706
2SK1706

Overview
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8 A Ptot Total Dissipation@TC=25℃ 35 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK1706 isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 5A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ...


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