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2SK1924

Part Number	2SK1924
Manufacturer	Inchange Semiconductor
Description	N-Channel MOSFET Transistor
Published	Jul 9, 2016
Detailed Description	isc N-Channel MOSFET Transistor 2SK1924 DESCRIPTION ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(M...
Datasheet	2SK1924 PDF File

Overview

isc N-Channel MOSFET Transistor 2SK1924 DESCRIPTION ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-speed switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 6 A Ptot Total Dissipation@TC=25℃ 70 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 2SK1924 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 10mA 600 V VGS(th) Gate Threshold Voltage VDS= 10V; ID=1mA 2.
0 3.
0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 3A 1.
1 1.
5 Ω IGSS Gate-Bo...

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