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2SK1933

Part Number	2SK1933
Manufacturer	Inchange Semiconductor
Description	N-Channel MOSFET Transistor
Published	Jul 9, 2016
Detailed Description	isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fa...
Datasheet	2SK1933 PDF File

Overview

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Suitable for switching regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 10 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK1933 isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) 2SK1933 SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 10mA 900 V V(BR)GSS Gate-Source Breakdown Voltage VDS= 0; IG= 100μA ±30 V VGS(th) Gate Threshold Voltage VDS= 10V; ID=1mA VDF Body to drain ...

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