R TRIACS
3CT1S
MAIN CHARACTERISTICS Package
IT(RMS) VDRM IGT
0. 8A 600V 5mA
APPLICATIONS
Pin
1 2 3
Description
1 MT1
G
2 MT2
z z
z AC switching z Phase control
TO-92
FEATURES
z , z Glass-passivated mesa
chip for reliability and
uniform
z
z RoHS
z Low on-state voltage and High ITSM
z RoHS products
ORDER MESSAGES
Order code 3CT1S-O-T-N-C
Marking 3CT1S
Package TO-92
Packaging Bag
ABSOLUTE RATINGS (TC=25℃)
Parameter Repetitive peak off-state voltage
Symbol
VDRM
Condition
Value Unit
±600 V
On-state RMS current Nonrepetitive surge peak on-state current
IT(RMS) ITSM
full sine wave full sine wave ,t=20ms full sine wave ,t=16. 7ms
0. 8 A 8A 9A
I2t t=10ms Repetitive rate of rise of on-state current after triggering dI/dt
0. 45 A2s 20 A/μs
Peak gate current
Average gate power
Storage temperature
Operation junction temperature
IGM PG(AV) Tstg
TVJ
over any 20ms period
1A 0. 1 W -40~150 ℃ 110 ℃
:201510G
1/5
R 3CT1S
ELECTRICAL CHARACTERISTIC (TC=25℃)
Parameter
Symbol
Condition
Peak Repetitive Blocking IDRM VDM=VDRM, Tj=110℃,
Current
gate open
Peak on-state voltage VTM ITM=2A
Min Typ Max Unit
- - 0. 1 mA
- 1. 5 1. 8 V
Gate trigger current
MT1(-),MT2(+),G(+) VDM=12V, MT1(-),MT2(+),G(-) IGT RL=100Ω MT1(+),MT2(-),G(-)
MT1(+),MT2(-),G(+)
-
- 5 mA - 5 mA - 5 mA - 7 mA
MT1(-),MT2(+),G(+) -
- 1. 1 V
Gate trigger voltage
VDM=12V, MT1(-),MT2(+),G(-) VGT RL=100Ω MT1(+),MT2(-),G(-)
-
- 1. 1 V - 1. 1 V
Holding current
MT1(+),MT2(-),G(+) -
IH VDM=12V, IGT=0. 1A
-
- 1. 3 V - 5 mA
VDM=67% VDRM(MAX),
Rise of off- state voltage
dV/dt Tj=110℃, gate open
10 -
- V/μs
THERMAL CHARACTERISTIC
Parameter Thermal resistance junction to lead
Symbol
Condition
Rth(j-l) full cycle
Min Typ Max Unit
- - 75 ℃/W
:201510G
2/5
R
ELECTRICAL CHARACTERISTICS (curves)
TC- IT(RMS)
3CT1S
TC (℃)
IT(RMS) (A)
IT – VTM
IT (A)
VTM (V)
:201510G
3/5
R
PACKAGE M...