DatasheetsPDF.com

RJH65T47DPQ-A0

Renesas
Part Number RJH65T47DPQ-A0
Manufacturer Renesas
Description IGBT
Published Jul 12, 2016
Detailed Description Preliminary Datasheet RJH65T47DPQ-A0 650V - 45A - IGBT Application: Power Factor Correction circuit R07DS1291EJ0101 Re...
Datasheet PDF File RJH65T47DPQ-A0 PDF File

RJH65T47DPQ-A0
RJH65T47DPQ-A0

Overview
Preliminary Datasheet RJH65T47DPQ-A0 650V - 45A - IGBT Application: Power Factor Correction circuit R07DS1291EJ0101 Rev.
1.
01 Oct 22, 2015 Features  Low collector to emitter saturation voltage VCE(sat) = 1.
8 V typ.
(at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology (G7H series)  High speed switching tf = 45 ns typ.
(at VCC = 400 V, VGE = 15 V , IC = 45 A, Rg = 10 , Ta = 25°CInductive load)  Operation frequency (20kHz ≤ f ˂ 100kHz)  Not guarantee short circuit withstand time Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 123 1.
Gate 2.
Collector G 3.
Emitter 4.
Collector E Absolute...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)