LTE Linear PAM
Description
FEATURES LTE Compliant 4th Generation HELPTM technology
High Efficiency (LTE MPR = 0 dB):
35 % @ POUT = +27.5 dBm
18 % @ POUT = +16 dBm
12 % @ POUT = +6 dBm
Low Quiescent Current: 3 mA Low Leakage Current in Shutdown Mode: <5 µA Internal Voltage Regulator Integrated “daisy chainable” directional coupler
with CPLIN and CP...
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