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IXKP13N60C5M

IXYS
Part Number IXKP13N60C5M
Manufacturer IXYS
Description CoolMOS Power MOSFET
Published Jul 14, 2016
Detailed Description IXKP 13N60C5M CoolMOS™ 1) Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET U...
Datasheet PDF File IXKP13N60C5M PDF File

IXKP13N60C5M
IXKP13N60C5M

Overview
IXKP 13N60C5M CoolMOS™ 1) Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge Preliminary data D G S ID25 = 6.
5 A VDSS = 600 V R =DS(on) max 0.
3 Ω TO-220 FP G D S MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = 4.
4 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0.
.
.
480 V Maximum Ratings 600 V ± 20 V 6.
5 A 4.
5 A 290 mJ 0.
44 mJ 50 V/ns Symbol RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.
typ.
max.
VGS = 10 V; ID = 6.
6 A VDS = VGS; ID = 0.
44 mA VDS ...


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