Silicon N Channel MOS FET
Description
2SK2554
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance RDS(on) = 4.5 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1016-0600 (Previous: ADE-208-359D)
Rev.6.00 Sep 07, 2005
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
1. Gate G 2. Drain
(Flang...
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