DatasheetsPDF.com

HRO400N10K

Part Number	HRO400N10K
Manufacturer	SemiHow
Description	N-Channel Trench MOSFET
Published	Jul 18, 2016
Detailed Description	HRO400N10K Jan 2016 HRO400N10K 100V N-Channel Trench MOSFET Features High Dense Cell Design Reliable and Rugged ...
Datasheet	HRO400N10K PDF File

Overview

HRO400N10K Jan 2016 HRO400N10K 100V N-Channel Trench MOSFET Features High Dense Cell Design Reliable and Rugged Advanced Trench Process Technology Key Parameters Parameter BVDSS ID RDS(on), typ Value 100 6.
3 33 Unit V A Pȍ Application Power Management in Inverter System Synchronous Rectification Package & Internal Circuit SOP-8 Absolute Maximum Ratings TA=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TA = 25୅ TA = 70୅ (Note 1) Single Pulsed Avalanche Energy (Note 2) Power Dissipation TA = 25୅ TA = 70୅ Operating and Storage Temperature Range 100 ρ20 6.
3 5.
0 25 60 3.
1 2.
0 -55 to +150 Units V V A A A mJ W W ୅ Thermal Resistance Characteristics Symbol Parameter RșJL Junction-to-Lead Junction-to-Ambient (t10s) RșJA Junction-to-Ambient (steady state) Typ.
---- Max.
24 40 75 Units ୅/W ୅/W ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝ͻΒΟ͑ͣͧ͑͢͡ HRO400N10K Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 6.
3 A 2.
0 -- gFS Forward Transconductance Off Characteristics VDS = 5, ID = 6.
3 A -- BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS = 0 V, ID = 250 Ꮃ VDS = 80 V, VGS = 0 V VDS = 80 V, TJ = 125୅ VGS = ρ20 V, VDS = 0 V 100 ---- Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Switching Characteristics VDS = 25 V, VGS = 0 V, f = 1.
0 MHz VGS = 0 V, VDS = 0 V, f = 1MHz ----- td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 50 V, ID = 6.
3 A, RG = 6 VDS = 80 V, ID = 6.
3 A, VGS = 10 V Sourc...

Similar Datasheet

HRO400N10K N-Channel Trench MOSFET - SemiHow

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)