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CM100TF-28H

Mitsubishi Electric Semiconductor
Part Number CM100TF-28H
Manufacturer Mitsubishi Electric Semiconductor
Description IGBT Module
Published Mar 23, 2005
Detailed Description MITSUBISHI IGBT MODULES CM100TF-28H HIGH POWER SWITCHING USE INSULATED TYPE B D X Q X Q X Z - M5 THD (7 TYP.) S N G u...
Datasheet PDF File CM100TF-28H PDF File

CM100TF-28H
CM100TF-28H

Overview
MITSUBISHI IGBT MODULES CM100TF-28H HIGH POWER SWITCHING USE INSULATED TYPE B D X Q X Q X Z - M5 THD (7 TYP.
) S N G u P Eu P G v P Ev P G wP EwP P R L C N P P G u N Eu N G v N Ev N G wN EwN J U N V W A E T G F K U AA M M M M AA Y - DIA.
(4 TYP.
) TAB #110, t = 0.
5 H V P GuP EuP U GvP EvP V GwP EwP W GwN EwN N P Description: Mitsubishi IGBT Modules are designed for use in switching applications.
Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode.
All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features: ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.
e.
CM100TF-28H is a 1400V (VCES), 100 Ampere Six-IGBT Module.
Type CM Current Rating Amperes 100 VCES Volts (x 50) 28 GuN EuN N GvN EvN Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N Inches 4.
21 4.
02 3.
54±0.
01 3.
15±0.
01 2.
01 1.
38 1.
28 1.
26 Max.
1.
18 0.
98 0.
96 0.
79 0.
67 Millimeters 107.
0 102.
0 90.
0±0.
25 80.
0±0.
25 51.
0 35.
0 32.
5 32.
0 Max 30.
0 25.
0 24.
5 20.
0 17.
0 Dimensions P Q R S T U V X Y Z AA Inches 0.
57 0.
55 0.
47 0.
43 0.
39 0.
33 0.
30 0.
24 0.
22 M5 Metric 0.
08 Millimeters 14.
5 14.
0 12.
0 11.
0 10.
0 8.
5 7.
5 6.
0 5.
5 M5 2.
0 Sep.
1998 MITSUBISHI IGBT MODULES CM100TF-28H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E-SHORT) Gate-Emitter Voltage (C-E-SHORT) Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) Peak Emitter Current** Maximu...


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