N-Channel MOSFET
Description
ADVANCE INFORMATION
Product Summary
V(BR)DSS 100V
RDS(ON) max 110mΩ @ VGS = 10V 122mΩ @ VGS = 6.0V
ID max TA = +25°C
3.8 A
3.6 A
Description
This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Power Managem...
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