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IS46R16800E

Integrated Silicon Solution
Part Number IS46R16800E
Manufacturer Integrated Silicon Solution
Description 128Mb DDR SDRAM
Published Jul 25, 2016
Detailed Description IS43/46R16800E, IS43/46R32400E 4Mx32, 8Mx16 JANUARY 2014 128Mb DDR SDRAM FEATURES DEVICE OVERVIEW • VDD and VDDQ: ...
Datasheet PDF File IS46R16800E PDF File

IS46R16800E
IS46R16800E


Overview
IS43/46R16800E, IS43/46R32400E 4Mx32, 8Mx16 JANUARY 2014 128Mb DDR SDRAM FEATURES DEVICE OVERVIEW • VDD and VDDQ: 2.
5V ± 0.
2V (-5,-6) • VDD and VDDQ: 2.
5V ± 0.
1V (-4) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for READs and centre-aligned with data for WRITEs • Differential clock inputs (CK and CK) • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Four internal banks for concurrent operation • Data Mask for write data.
DM masks write data at both rising and falling edges of data strobe • Burst Length: 2, 4 and 8 • Burst Type: Sequential and Interleave mode • Programmable CAS latency: 2, 2.
5, 3, and 4 • Auto Refresh and Self Refresh Modes • Auto Precharge • Tras Lockout...



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