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GT43

Silicon NPN Darlington Power Transistor

Description

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High DC Current Gain : hFE= 2000(Min.)@ IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 3.0V(Max.)@ IC= 6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching for dynamotor excitat...

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