650V N-Channel MOSFET
Description
HF4N65
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 2.0 A
2.5 --
Off Characteristics
BVDSS ΔBVDSS
/ΔTJ IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage Breakdown Volt...
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